Micron Technology DRAM SDRAM-DDR, Part #MT40A1G8SA-062E:R | Dynamic random access memory | DEX 23"-24" 5 R OTP(25) W1 WV

5 R OTP(25) W1 WV 300

038" Thick ACS800 3 AC Phase Quick Connect Terminals

Intel Central Processing Unit CD8069504195101 SRF95 64BIT MPU

12-/14-/16-bit DACs Operates from single/dual supplies Software programmable output range +5V

µP Core Supplies

Micron Technology DRAM SDRAM-DDR, Part #MT40A1G8SA-062E:R | Dynamic random access memory | DEX 23"-24" 5 R OTP(25) W1 WVMicron Technology DRAM SDRAM DDR4, Part #MT40A1G8SA 062E: R Features: VDD = VDDQ = 1. 2V + 60mv VPP = 2. 5V, 125mV, + 250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O Refresh time of 8192 cycle at TC temperature range: 16 internal banks (x4, x8): 4 groups of 4 banks each 8n bit prefetch architecture Programmable data strobe preambles Data strobe preamble training Command Address latency (CAL) Multipurpose register READ