IRFB38N20 200V 43A N-Channel Power MOSFET Transistor Hall-Effect-Based Sensor IC 30A It has a break-down voltage

It has a break-down voltage and low drive current

6E resistors

Sensitivity can adjust by the capacitance(0~50pF) outside

Metal Film Resistor limit the flow of electric current using a Metal Film

Extremely stable output offset voltage

IRFB38N20 200V 43A N-Channel Power MOSFET Transistor Hall-Effect-Based Sensor IC 30A It has a break-down voltageAn N Channel MOSFET uses electrons to create a current channel. When the MOSFET is active and switched on, electrons can move fast and readily via the current. The mobility of the carriers in N Channel MOSFETs is approximately 2 to 3 times higher than in P channel MOSFETs for the same RDS(on) value, thus the P Channel chip must be 2 to 3 times the size of the N Channel chip. As a result, MOSFET transistor N Channels are frequently preferred for high